BF1109WR,115 datasheet
by NXP Semiconductors
- N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.3 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 8 to 16 mA; Noise figure: 1.5@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 11 V; Y<sub>FS</sub> min.: 24 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd
- Original
- Yes
- Unknown
- Obsolete
- Find it at Findchips.com
