BF1100,215 datasheet
by NXP Semiconductors
- Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 8 to 13 mA; I<sub>DSS</sub> min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 14 V; Y<sub>FS</sub> min.: 24 mS; Package: SOT143B (SOT4); Container: Tape reel smd
- Original
- Yes
- Unknown
- Obsolete
-
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