BAS16VV,115 datasheet
by NXP Semiconductors
- Triple high-speed switching diodes - C<sub>d</sub> max.: 1.5 pF; Configuration: triple isolated ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 4.5 A; I<sub>R</sub> max: 1000@VR=75V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 100 V; Package: SOT666 (SS-Mini); Container: Tape reel smd
- Original
- Yes
- Unknown
- Transferred
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