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APT35GA90BD15
datasheet
by Microsemi
Description
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 35;
Datasheet Type
Original
RoHS
Yes
Pb Free
Yes
Lifecycle
Transferred
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APT35GA90BD15
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