DSA2IH00125935.pdf by Not Available

Partial File Text GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF (TYP) HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz Lgi = 1 .0 |im
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Pb Free Unknown
Lifecycle Unknown

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