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TOSHIBA 1SV281 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 8 1 VCO FOR V/ UHF BAND RADIO Unit in mm ⢠High Capacitance Ratio : Ciy/C4v = 2.0 (TYP.) ⢠Low Ser
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RoHS
Yes
Pb Free
No
Lifecycle
Active
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1SV281