DSAE0033286.pdf by California Eastern Laboratories

Partial File Text HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES · Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TY
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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HS350 marking v79 ne3508m04 NE3508M04-A NE3508M04-T2 NE3508M04-T2-A transistor marking v79 ghz

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