DSA00311360.pdf by Central Semiconductor

Partial File Text PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Ar
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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1N4148 1N4154 1N4448 1N4454 1N914 1N914B CMPD2836 CMPD2838 CMPD4448 CMPD7000 CMPD914 CPD83V

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