DSA2IH00127722.pdf by Not Available

Partial File Text PRELIMINARY DATA SHEET NPN SILICON EPITAXIALTRANSISTOR FEATURES OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHz, V ce = 3.6 V, Class AB, Duty 1/8 NE68939 (Units in mm) OU
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

DSA2IH00127722.pdf preview

Download Datasheet

User Tagged Keywords