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    DSASW0053897.pdf by International Rectifier

    • PD -96298 IRFH5207PbF HEXFET® Power MOSFET VDS 75 9.6 RDS(on) max (@VGS = 10V) V m Qg (typical) RG (typical) 39 nC 1.7 ID 71 A (@Tc(Bottom) = 25°C) P
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