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    DSASW0053908.pdf by International Rectifier

    • PD -96299 IRFH5406PbF HEXFET® Power MOSFET VDS 60 V 14.4 m nC RG (typical) 23 1.1 ID 40 A RDS(on) max (@VGS = 10V) Qg (typical) (@Tc(Bottom) = 25°C)
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