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    DSAH00210765.pdf by Infineon Technologies

    • P-HEMT Preliminary Data Sheet Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz (F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz) ยท Suitable for PCS CDMA and UMTS
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