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DSAISS00018057.pdf
Manufacturer
Infineon Technologies
Partial File Text
BSB012NE2LXI OptiMOSTM Power-MOSFET Product Summary Features VDS ⢠100% avalanche tested 1.2 mW 180 A 39 nC Qg(0V..10V) ⢠Low profile (<0.7 mm) RDS(on),ma
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Original
ECAD Model
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