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    DSAEDA00050455.pdf

    • Renesas Electronics
    • Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0500 Rev.5.00 May 09, 2012 Silicon N-Channel MOS FET Features  High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% (f = 520 MH
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