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    DSA00428650.pdf

    • Toshiba
    • 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm · High DC current gain: hFE = 2000 (min) (VCE = -2 V, IC = -1.5 A) · Low saturation vo
    • Original

    DSA00428650.pdf preview Download Datasheet

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    2SB148 2SB1481 2SD2241 B1481
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