DSAISS00018375.pdf by Infineon Technologies

Partial File Text PTAB182002FC Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805 â 1880 MHz Description The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amp
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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