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DSAIHSC000131401.pdf
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IRLW/I640A A d van ced Power MOSFET FEATURES B V dss = 200 V ^D S (o n ) = 0 .1 8 f l ⦠Avalanche Rugged Technology ⦠Rugged Gate Oxide Technology ⦠Lower Input Capacitan
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ECAD Model
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