DSA0073083.pdf
by Samsung Electronics
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2N6517
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
· Collector-Emitter Voltage: VCEO=350V
· Collector Dissipation: PC (max)=625mW
TO-92
)
ABSOLUTE MAXIMUM RATINGS (TA=25
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Original
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Unknown
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Unknown
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Unknown
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