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    DSAIHSC000133076.pdf

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    • FLR026FH FUJITSU K-Band Power GaAs FETs FEATURES • High Output Power: P-|<jB = 23.0dBm(Typ.) • High Gain: G-j^B = 8.0dB(Typ.) • High PAE: riadd = 29%(Typ.) • Proven Reliability D
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