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FLM0910-4C
FUJITSU
Internally Matched Power GaAs FETs
FEATURES
⢠High Output Power: P ^ b = 36dBm (Typ.)
⢠High Gain: G ^ b = 7.5dB (Typ.)
⢠High PAE: riadd = 30% (Typ.)
⢠Broad Ban
