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Partial File Text FLX257XV GaAs FET & HEMT Chips FEATURES â¢ â¢ â¢ â¢ High O utput Power: P-|<jB = 33.5dBm (Typ.) High Gain: G -j^B = 7.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability &Bp|
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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