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DSAIHSC000133425.pdf
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FLM5964-6F C-Band Internally Matched FET FEATURES ⢠⢠⢠⢠High Output Power: P ^ b = 38.5dBm (Typ.) High Gain: G ^ b = 10.0dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -46dBc@P
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