DSAISS0006691.pdf by Central Semiconductor
- PROCESS CPD65 Low Leakage Diode Picoampere Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11.8 x 11.8 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 2
- Original
- Unknown
- Unknown
- Unknown
-
Powered by
Findchips
