DSA0074418.pdf
by Samsung Electronics
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SSH10N90A
Advanced Power MOSFET
FEATURES
BVDSS = 900 V
Avalanche Rugged Technology
RDS(on) = 1.2
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 10 A
Improved Gate Ch
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Original
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Unknown
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Unknown
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Unknown
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