DSA0074421.pdf by Samsung Electronics

Partial File Text SSH25N40A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Ch
Datasheet Type Original
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3180 diode SSH25N40A

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