DSA0074423.pdf by Samsung Electronics

Partial File Text SSH4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate C
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Transferred
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SSH4N80AS

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