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    DSAISS0007653.pdf by Diodes

    • DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features RDS(on) max 20V 13mΩ @ VGS = 4.5V 14mΩ @ VGS = 4.0V 17mΩ @ VGS = 3.1V 18mΩ @ VGS = 2.5V 28mΩ @ VGS = 1.8V 
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