DSAH00602563.pdf by SANYO Electric

Partial File Text FTD1012 P- Channel Silicon MOS FET Features · Low ON-state resistance. · 4V drive. · Mount height of 1.1mm. · Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Sou
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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