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    DSAISS00031158.pdf

    • International Rectifier
    • IRLH5030PbF HEXFET® Power MOSFET V DS 100 V R DS(on) max 9.9 mΩ Qg (typical) 44 nC R G (typical) 1.2 Ω h A (@VGS = 4.5V) ID 88 (@Tmb = 25°C)
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    DSAISS00031158.pdf preview Download Datasheet

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