DSAISS00031158.pdf
- International Rectifier
- IRLH5030PbF HEXFET® Power MOSFET V DS 100 V R DS(on) max 9.9 m⦠Qg (typical) 44 nC R G (typical) 1.2 ⦠h A (@VGS = 4.5V) ID 88 (@Tmb = 25°C)
- Original
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