DSAISS00031215.pdf by International Rectifier

Partial File Text IRG7CH37K10EF INSULATED GATE BIPOLAR TRANSISTOR Â C VCES = 1200V IC(Nominal) = 15A TJ(max) = 175Â°C G VCE(on) typ = 1.9V @ IC= 15A E n-channel Applications ï·Â Medium Power Dr
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