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    DSAISS00031236.pdf by International Rectifier

    • IRG7PH37K10DPbF IRG7PH37K10D-EPbF   Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V     C G G IC = 25A, TC =100°C tSC 10µs, TJ(m
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