DSAISS00031275.pdf
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International Rectifier
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FASTIRFETâ¢
IRFHE4250DPbF
HEXFET® Power MOSFET
Q1
Q2
VDSS
25
25
V
RDS(on) max
(@VGS = 4.5V)
4.10
1.35
mïï ï
Qg (typical)
13ï
35
nC
ID
(@TC = 25Â
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Original
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