DSAISS00031365.pdf
- International Rectifier
- IRFH5110PbF HEXFET® Power MOSFET VDS 100 V RDS(on) max 12.4 mΩ Qg (typical) 54 nC RG (typical) 1.5 Ω 63 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQ
- Original
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