DSAE0044386.pdf by NEC

Partial File Text MOS MOS Field Effect Power Transistors µ PA1703 N MOS FET NMOS FET mm 8 5 4 V 1,2,3 ; Source 4 ; Gate 5,6,7,8 ; Drain RDSon1 = 10.5 mVGS = 10 V, ID = 5.0 A R
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C10943X PA1703 TEA-568 TEA-572