DSAE0044458.pdf

Manufacturer NEC
Partial File Text MOS MOS Field Effect Transistor 2SK2981 N MOS FET 2SK2981 N MOS FET ON RDS(on)1 = 27 m MAX.VGS = 10 V, ID = 10 A (TO-251) RDS(on)2 = 40 m MAX.VGS = 4.5 V, ID = 10 A
Datasheet Type Original

DSAE0044458.pdf preview Download Datasheet