This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
T O S H IB A
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE
2SB1481
SWITCHING APPLICATIONS
2SB1481
:
U nit in mm
High DC Current Gain : hFE = 2000 (Min.) (VCe = - 2 V , IC = - 1 .5 A )