TO SHIB A
TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE
HN2S01FU
H N
7
< ; n i
F h
U nit in mm
2.1 ± 0 .
LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION
· ·
HN2S01F is
Scan
Yes
No
Active
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.