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    • TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 1 Ç Ç 3 A 4 WÊÊF WÊÊF W ÊT ULTRA HIGH SPEED SWITCHING APPLICATION. + 0.5 2 . 5 - 0 .3 + 0.25 1 .5 - 0 .1 5 Unit i
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