DSADIGA000154294.pdf by Infineon Technologies

Partial File Text IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor IPB038N12N3 G Product Summary Features VDS 3.8 mW ID â¢ Excellent gate charge x R DS(on) product (FOM) V RDS(
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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