DSAE0047500.pdf

Manufacturer NEC
Partial File Text MOS MOS Field Effect Transistor µ PA2610 P MOS FET µ PA2610 P MOS FET 1.8 V RDS(on)1 = 69 m MAX.VGS = -4.5 V, ID = -2.5 A RDS(on)2 = 88 m MAX.VGS = -2.5 V, ID =
Datasheet Type Original
ECAD Model
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