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    DSAE0047980.pdf by NEC

    • DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2800 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 8 7 6 5 3 4 0.32±0.05 RDS(on)2 = 10 m MAX. (VGS = 4.5 V, ID = 8.5 A) · Thin ty
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