DSAE0047981.pdf by NEC

Partial File Text DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2801 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 8 7 6 5 3 4 0.32±0.05 RDS(on)2 = 15 m MAX. (VGS = 4.5 V, ID = 8 A) · Thin type
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