DSASW00321514.pdf by PanJit International

Partial File Text PJ09N03D 25V N-Channel Enhancement Mode MOSFET FEATURES · RDS(ON), VGS@10V,IDS@30A=9m · RDS(ON), VGS@4.5V,IDS@30A=16m · Advanced Trench Process Technology · High Density Cell Design For Ultra Lo
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