DSAIH000132189.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE SEMICONDUCTOR MICROWAVE POWER GaAs FET TECHNICAL DATA FEATURES : HIGH POWER TPM 2626-30-301 PARTIALLY MATCHED TYPE HERMETICALLY SEALED PACKAGE P-idB = 46.0 dBm
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Active

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