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Partial File Text TOSHIBA MICROWAVE S E M IC O N D U C T O R MICROWAVE POWER GaAs FET TECHNICAL DATA FEATURES: HIGH POWER P*|dB = 39 dBm at 6.4 GHz to 7.2 GHz HIGH GAIN GldB = 7.0 dB at 6.4 GHz to 7.2 GHz
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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