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Partial File Text TOSHIBA M ICROW AVE SEM ICO NDU CTO R MICROWAVE POWER GaAs FET TECHNICAL DATA FEATURES : HIGH POWER p idB = 36.5 dBm at 9.5 GHz to 10.5 GHz TIM0910-4 BROAD BAND INTERNALLY MATCHED
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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