DSA00569334.pdf by PanJit International

Partial File Text PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES · RDS(ON), VGS@-1.8V,ID@-1.5A=200m · RDS(ON), VGS@-4.5V,ID@-2.2A=105m · Advanced Trench Process Technology · High Density Cell Design For Ultra
Datasheet Type Original
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Pb Free Unknown
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