DSA0062936.pdf by Toshiba

Partial File Text TOSHIBA MICROWAVE POWER GaAs FET TNM1800-7 High Power GaAs FETs (L, S-Band) Features · High power - P1dB = 39.5 dBm at 1.8 GHz · High gain - G1dB = 10.0 dB at 1.8 GHz · Hermetically seale
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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