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TOSHIBA
MICROWAVE POWER GaAs FET
TNM1800-7
High Power GaAs FETs (L, S-Band)
Features
· High power
- P1dB = 39.5 dBm at 1.8 GHz
· High gain
- G1dB = 10.0 dB at 1.8 GHz
· Hermetically seale
